فهرست مقالات Low Noise

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  1 - A Novel Ultra-Broad Band, High Gain, and Low Noise Distributed Amplifier Using Modified Regulated Cascode Configuration (MRGC) Gain-Cell
  Zainab Baharvand Ahmad Hakimi
  10.7508/jist.2016.01.007
  In this paper, an ultra-broad bandwidth, low noise, and high gain-flatness CMOS distributed amplifier (CMOS-DA) based on a novel gain-cell is presented. The new gain-cell that enhances the output impedance as a result the gain substantially over conventional RGC is the چکیده کامل

  In this paper, an ultra-broad bandwidth, low noise, and high gain-flatness CMOS distributed amplifier (CMOS-DA) based on a novel gain-cell is presented. The new gain-cell that enhances the output impedance as a result the gain substantially over conventional RGC is the improved version of Regulated Cascode Configuration (RGC). The new gain-cell based CMOS-DA is analyzed and simulated in the standard 0.13 μm-CMOS technology. The simulated results of the proposed CMOS-DA are included 14.2 dB average power gain with less than ± 0.5 dB fluctuations over the 3-dB bandwidth of 23 GHz while the simulated input and output return losses (S11 and S22) are less than -10 dB. The IIP3 and input referred 1-dB compression point are simulated at 15 GHz and achieved +8 dBm and -6.34 dBm, respectively. The average noise figure (NF) in the entire interest band has a low value of 3.65 dB, and the DC power dissipation is only 45.63 mW. The CMOS-DA is powered by 0.9 V supply voltage. Additionally, the effect of parameters variation on performance specifications of the proposed design is simulated by Monte Carlo simulations to ensure that the desired accuracy is yielded. پرونده مقاله
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  2 - An Ultra-Wideband Common Gate LNA With Gm-Boosted And Noise Canceling Techniques
  Amin Jamalkhah Ahmad Hakimi
  10.7508/jist.2014.02.006
  In this paper, an ultra-wideband (UWB) common gate low-noise amplifier (LNA) with gm-boosted and noise-cancelling techniques is presented. In this scheme we utilize gm-boosted stage for cancelling the noise of matching device. The bandwidth extension and flat gain are a چکیده کامل

  In this paper, an ultra-wideband (UWB) common gate low-noise amplifier (LNA) with gm-boosted and noise-cancelling techniques is presented. In this scheme we utilize gm-boosted stage for cancelling the noise of matching device. The bandwidth extension and flat gain are achieved by using of series and shunt peaking techniques. Simulated in .13 um Cmos technology, the proposed LNA achieved 2.38-3.4dB NF and S11 less than -11dB in the 3.1-10.6 GHz band. Maximum power gain (S21) is 11dB and -3dB bandwidth is 1 .25-11.33 GHz. The power consumption of LNA is 5.8mW. پرونده مقاله