Journal of Information Systems and Telecommunication (JIST)
,
Issue1,Year,
Winter
2016
In this paper, an ultra-broad bandwidth, low noise, and high gain-flatness CMOS distributed amplifier (CMOS-DA) based on a novel gain-cell is presented. The new gain-cell that enhances the output impedance as a result the gain substantially over conventional RGC is the More
In this paper, an ultra-broad bandwidth, low noise, and high gain-flatness CMOS distributed amplifier (CMOS-DA) based on a novel gain-cell is presented. The new gain-cell that enhances the output impedance as a result the gain substantially over conventional RGC is the improved version of Regulated Cascode Configuration (RGC). The new gain-cell based CMOS-DA is analyzed and simulated in the standard 0.13 μm-CMOS technology. The simulated results of the proposed CMOS-DA are included 14.2 dB average power gain with less than ± 0.5 dB fluctuations over the 3-dB bandwidth of 23 GHz while the simulated input and output return losses (S11 and S22) are less than -10 dB. The IIP3 and input referred 1-dB compression point are simulated at 15 GHz and achieved +8 dBm and -6.34 dBm, respectively. The average noise figure (NF) in the entire interest band has a low value of 3.65 dB, and the DC power dissipation is only 45.63 mW. The CMOS-DA is powered by 0.9 V supply voltage. Additionally, the effect of parameters variation on performance specifications of the proposed design is simulated by Monte Carlo simulations to ensure that the desired accuracy is yielded.
Manuscript profile
Journal of Information Systems and Telecommunication (JIST)
,
Issue2,Year,
Spring
2013
This paper presents a wideband low-noise mixer in CMOS 0.13-um technology that operates between 2–10.5 GHz. The mixer has a Gilbert cell configuration that employs broadband low-noise trans conductors designed using the negative-positive feedback technique used in low-n More
This paper presents a wideband low-noise mixer in CMOS 0.13-um technology that operates between 2–10.5 GHz. The mixer has a Gilbert cell configuration that employs broadband low-noise trans conductors designed using the negative-positive feedback technique used in low-noise amplifier designs. This method allows broadband input matching. The current-bleeding technique is also used so that a high conversion gain can be achieved. Simulation results show excellent noise and gain performance across the frequency span with an average double-sideband noise figure of 2.9 dB and a conversion gain of 15.5 dB. It has a third-order intermodulation intercept point of -8.7 dBm at 5 GHz.
Manuscript profile
Journal of Information Systems and Telecommunication (JIST)
,
Issue2,Year,
Spring
2014
In this paper, an ultra-wideband (UWB) common gate low-noise amplifier (LNA) with gm-boosted and noise-cancelling techniques is presented. In this scheme we utilize gm-boosted stage for cancelling the noise of matching device. The bandwidth extension and flat gain are a More
In this paper, an ultra-wideband (UWB) common gate low-noise amplifier (LNA) with gm-boosted and noise-cancelling techniques is presented. In this scheme we utilize gm-boosted stage for cancelling the noise of matching device. The bandwidth extension and flat gain are achieved by using of series and shunt peaking techniques. Simulated in .13 um Cmos technology, the proposed LNA achieved 2.38-3.4dB NF and S11 less than -11dB in the 3.1-10.6 GHz band. Maximum power gain (S21) is 11dB and -3dB bandwidth is 1 .25-11.33 GHz. The power consumption of LNA is 5.8mW.
Manuscript profile
در این مقاله یک ساختار جدید شامل خازن و مقاومت منفی، جهت افزایش بهره و پهنای باند تقویتکنندههای توزیعشده ارائه شده است. ساختار ارائهشده در خط انتقال گیت تقویتکننده توزیعشده مورد استفاده قرار گرفته و مدار حاصل در نرمافزار Advanced Design System با استفاده از مدل µ More
در این مقاله یک ساختار جدید شامل خازن و مقاومت منفی، جهت افزایش بهره و پهنای باند تقویتکنندههای توزیعشده ارائه شده است. ساختار ارائهشده در خط انتقال گیت تقویتکننده توزیعشده مورد استفاده قرار گرفته و مدار حاصل در نرمافزار Advanced Design System با استفاده از مدل µm CMOS 13/0 شبیهسازی شده است. خازن منفی در خط انتقال گیت اثرات خازنهای پارازیتی سلولهای بهره را کاهش داده و پهنای باند تقویتکننده را افزایش ميدهد و در نتیجه موجب افزایش بهره ولتاژ مدار میشود. مقاومت منفی ایجادشده تلفات خطوط انتقال را کاهش و پهنای باند را افزایش میدهد. بهره ولتاژ شبیهسازی شده dB 15 با تغییر بهره dB 5/0± در باند فرکانسی GHz 49- 5/0 ميباشد. ورودی و خروجی مدار با مقاومت Ω 50 تطبیق یافتهاند و تلفات برگشتی از ورودی و خروجی به ترتیب زیر dB 15/8- و dB 2/9- است. این مدار دارای عدد نویزی کمتر از dB 6/4 و توان مصرفی آن mW 99 از منبع تغذیه V 8/1 است.
Manuscript profile
Rimag
Rimag is an integrated platform to accomplish all scientific journal requirements such as submission, evaluation, reviewing, editing, DOI assignment and publishing in the web.