Performance Evaluation of TMDFET-based SRAM Memory Cell Compared to Si-MOSFET Technology
Subject Areas : electrical and computer engineeringفرزانه ایزدی نسب 1 , Morteza Gholipour 2
1 -
2 - Babol Noshirvani University of Technology
Keywords: 6T-SRAM, static random access memory, transition metal dichalcogenides FET (TMDFET), process, voltage and temperature variations (PVT),
Abstract :
Transition metal dichalcogenides FETs (TMDFETs) are among the emerging devices that have been considered by researchers in recent years. In this paper, the effect of parameter variations, temperature and power supply on the performance of TMDFET transistors has been investigated in comparison with Si-MOSFET technology. The results indicate that TMDFET is less sensitive to these variations compared to Si-MOSFET devices. By selecting the appropriate transistors size ratios, the performance of the TMDFET-based conventional 6-transistor static random access memory cell is evaluated in comparison with the Si-MOSFET in 16nm technology. Simulations are performed at room temperature, 0.7 V supply voltage and the same conditions for both TMDFET and Si-MOSFET devices. The results of the simulations show that TMDFET-based SRAM cell has 29.44% more WTP, corresponding to more writing ability, 49.49% more WTI×WTV, corresponding to higher writing noise margin, and 29.48% lower read delay. In other words, a TMDFET-based SRAM cell performs better than Si-MOS-SRAM in terms of write ability, static read margin, and read delay.
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