ترانزیستور MESFET کربید سیلیسیم با گیت تورفته در سمت سورس و درین و لایه مدفون N در کانال
محورهای موضوعی : مهندسی برق و کامپیوتر
سیدمحمد رضوی
1
,
سیدحمید ظهیری
2
1 - دانشگاه نیشابور
2 - دانشگاه بیرجند
کلید واژه: MESFET گیت تورفته هدایت انتقالی اثر کانال کوتاه ولتاژ شکست,
چکیده مقاله :
در این مقاله، یک ترانزیستور MESFET با گیت تورفته در دو سمت سورس و درین و لایه مدفون نوع N در کانال (SDS-DRG) ارائه می‌گردد. مهم‌ترین پارامترهای الکتریکی ساختار پیشنهادی همچون اثر کانال کوتاه، هدایت انتقالی، جریان درین و ولتاژ شکست شبیه‌سازی شده و با همین مقادیر در ترانزیستورهای MESFET با گیت تورفته در سمت سورس (SS-DRG) و گیت تورفته در سمت درین (DS-DRG) مقایسه می‌شود. نتایج شبیه‌سازی نشان می‌دهد که کاهش ضخامت کانال زیرگیت در ساختار SDS-DRG، باعث بهبود ماکسیمم هدایت انتقالی و کاهش اثر کانال کوتاه در مقایسه با ساختارهای SS-DRG و DS-DRG می‌گردد. کاهش ضخامت کانال زیرگیت در سمت درین در ساختار SDS-DRG، جهت افزایش ولتاژ شکست نسبت به ساختار SS-DRG استفاده می‌شود. همچنین لایه مدفون N با چگالی ناخالصی بالا در SDS-DRG، منجر به افزایش جریان درین اشباع در مقایسه با SS-DRG و DS-DRG می‌شود.
A new structure named as source/drain sides-double recessed gate with N-buried layer in the channel (SDS-DRG) silicon carbide (SiC) based metal semiconductor field effect transistor (MESFET) is presented in this study. Important parameters such as short channel effect, maximum DC trans-conductance, drain current and breakdown voltage of the proposed structure are simulated and compared with those of the source side-double recessed gate (SS-DRG) and drain side-double recessed gate (DS-DRG) 4H-SiC MESFETs. Our simulation results reveal that reducing the channel thickness under the gate at the SDS-DRG structure improves the maximum DC trans-conductance and reduces the short channel effects compared to SS-DRG and DS-DRG structures. Reducing the channel thickness under the gate at the drain side of the SDS-DRG structure is used to enhance the breakdown voltage in comparison with the SS-DRG structure. Also, N-buried layer with larger doping concentration in the SDS-DRG structure improves the saturated drain current compared to SS-DRG and DS-DRG structures.
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