بررسی تاثیر تعداد اتمهای کربن موجود در عرض نوار نانومتری گرافنی بر جریان ترانزیستور تک الکترونی گرافنی
الموضوعات :داریوش دیدبان 1 , وحیده خادم حسینی 2
1 - دانشگاه کاشان
2 - دانشگاه کاشان
الکلمات المفتاحية: ترانزیستور تک‌الکترونیتونل‌زنینقطه کوانتومینوار نانومتری گرافنی,
ملخص المقالة :
ترانزیستور تک‌الکترونی یک قطعه الکترونیکی در ابعاد نانومتر است که شامل سه الکترود فلزی و یک جزیره یا نقطه کوانتومی می‌باشد. جزیره می‌تواند از نانومواد کربنی مانند نوار نانومتری گرافنی انتخاب شود. تعداد اتمهای کربن موجود در نوار نانومتری گرافنی بر سرعت عملکرد ترانزیستور و ناحیه انسداد کولنی تأثیر می‌گذارد. در این تحقیق، جریان ترانزیستور تک‌الکترونی با جزیره‌ای از نوار نانومتری گرافنی مدل‌سازی شده است. تأثیر عواملی از جمله تعداد اتمهای کربن موجود در عرض نوار نانومتری گرافنی، طول نوار نانومتری گرافنی و ولتاژ اعمالی بر گیت روی جریان ترانزیستور بررسی شده است. نتایج مدل‌سازی نشان می‌دهد که با افزایش تعداد اتم‌ها در عرض نوار نانومتری گرافنی، ناحیه انسداد کولنی در نمودارهای پایداری بار ترانزیستور کاهش می‌یابد. همچنین کاهش طول نوار نانومتری گرافنی و افزایش ولتاژ اعمالی بر گیت باعث کاهش ناحیه جریان صفر ترانزیستور می‌شود. افزایش تعداد اتم‌ها در عرض سه جزیره باعث افزایش ناحیه تونل‌زنی تک‌الکترون و بهبود عملکرد ترانزیستور می‌شود.
[1] V. Khademhosseini, D. Dideban, M. T. Ahmadi, R. Ismail, and H. Heidari, "Single electron transistor scheme based on multiple quantum dot islands: carbon nanotube and fullerene," ECS J. of Solid State Science and Technology, vol. 7, no. 10, pp. 145-152, Jan. 2018.
[2] T. Ihn, J. Guttinger, F. Molitor, S. Schnez, E. Schurtenberger, A. Jacobsen, S. Hellmuller, T. Frey, S. Droscher, C. Stampfer, and K. Ensslin, "Graphene single-electron transistors," Material Tody, vol. 13, no. 3, pp. 44-50, Mar. 2010.
[3] C. J. Gorter, "A possible explanation of increases in electrical resistance of thin metal films at low temperature and low electric field strength," Physical, vol. 17, no. 8, pp. 777-780, Aug. 1951.
[4] D. Averin and K. Likharev, "Mesoscopic Phenomena in Solids," North-Holland, Elsevier Science Publishers B. V., Amsterdam, 1991.
[5] T. A. Fulton and G. J. Dolan, "Observation of single-electron charging effects in small tunnel junctions," Physical Review Letters, vol. 59, no. 1, pp. 109-112, Jul. 1987.
[6] L. Zhung, L. Guo, and S. Y. Chou, "Silicon single-electron quantum-dot transistor switch operating at room temperature," Applied Physics Letters, vol. 72, no. 10, pp. 1205-1207, Jun. 1998.
[7] V. V. Shorokhov, D. E. Presnov, S. V. Amitonov, Y. A. Pashkin, and V. A. Krupenin, "Single-electron tunneling through an individual arsenic dopant in silicon," Nanoscale, vol. 9, no. 2, pp. 613-620, Nov. 2017.
[8] Atomistic Toolkit is a licensed software available from https://www.synopsys.com/silicon/quantumatk.html
[9] V. Khademhosseini, D. Dideban, M. T. Ahmadi, and R. Ismail, "Impact of the vacancy defects on the performance of a single electron transistor with a carbon nanotube island," J. of Computational Electronics, vol. 18, no. 2, pp. 428-435, Dec. 2019.
[10] V. Khademhosseini, D. Dideban, M. T. Ahmadi, and R. Ismail, "An analytical approach to model capacitance and resistance of capped carbon nanotube single electron transistor," AEÜ-International J. of Electronics and Communications, vol. 90, pp. 97-102, Jun. 2018.
[11] V. Khademhosseini, D. Dideban, M. T. Ahmadi, and R. Ismail, "Current analysis of single electron transistor based on graphene double quantum dots," ECS J. of Solid State Science and Technology, vol. 9, no. 2, Article No.: 0210035, 5 pp., Jan. 2020.
[12] V. Khademhosseini, A. K. Jameil, and M. T. Ahmadi, "Analysis of temperature limitation of graphene single electron transistor," in Proc. 2nd Engineering Scientific Conf. College of Engineering-University of Diyala, pp. 568-573, Dec. 2015.
[13] M. Zoghi, A. Yazdanpanah Goharrizi, and M. Saremi, "Band gap tuning of armchair graphene nanoribbons by using antidotes," J. of Electronic Materials, vol. 46, no. 1, pp. 340-346, Sept. 2017.
[14] A. Yazdanpanah Goharrizi, M. Zoghi, and M. Saremi, "Armchair graphene nanoribbon resonant tunneling diodes using antidote and BN doping," IEEE Trans. on Electron Devices, vol. 63, no. 9, pp. 3761-3768, Jul. 2016.
[15] M. Saremi, M. Saremi, H. Niazi, and A. Yazdan Panah Goharrizi, "Modeling of lightly doped drain and source graphene nanoribbon field effect transistors," Superlattices and Microstructures, vol. 60, pp. 67-72, Aug. 2013.
[16] V. Khademhosseini, D. Dideban, M. T. Ahmadi, and R. Ismail, "Impact of chiral indices on the performance of single electron transistor utilizing carbon nanotube island," ECS J. of Solid State Science and Technology, vol. 8, no. 3, pp. 26-29, Mar. 2019.
[17] V. Khademhosseini, M. T. Ahmadi, S. Afrang, and R. Ismail, "Analysis of coulomb blockade in fullerene single electron transistor at room temperature," J. of Nanoanalysis, vol. 4, no. 2, pp. 120-125, Aug. 2017.
[18] V. Khademhosseini, M. T. Ahmadi, and R. Ismail, "Analysis and modeling of fullerene single electron transistor based on quantum dot arrays at room temperature," J. of Electronic Materials, vol. 47, no. 8, pp. 4799-4806, May 2018.
[19] V. Khademhosseini, D. Dideban, M. T. Ahmadi, and R. Ismail, "Analysis of co-tunneling current in fullerene single-electron transistor," Brazilian J. of Physics, vol. 48, no. 4, pp. 406-410, May 2018.
[20] V. Khademhosseini, D. Dideban, and M. T. Ahmadi, "An analytical approach for current modeling in a single electron transistor (SET) utilizing graphene nanoscroll (GNS) as the island," ECS J. of Solid State Science and Technology, vol. 9, no. 7, Article No.: 071001, 5 pp., Aug. 2020.
[21] V. Khademhosseini, M. T. Ahmadi, S. Afrang, and R. Ismail, "Current analysis and modelling on fullerene single electron transistor at room temperature," J. of Electronic Materials, vol. 46, no. 7, pp. 4294-4298, Feb. 2017.
[22] K. Golmohammadi, V. Khademhosseini, M. T. Ahmadi, D. Dideban, and R. Ismail, "Analysis and modeling of white graphene physical properties for sensor applications," in Proc. of the National Academy of Sciences, India Section A: Physical Sciences, vol. 90,no.3, pp. 475-479,Jan. 2019.
[23] S. J. Ray, "First-principles study of MoS2, phosphorene and graphene based single electron transistor for gas sensing applications," Sens. Actuator B, vol. 222, pp. 492-498, Jan. 2016.
[24] C. N. Bondja, Z. Geng, R. Granzner, J. Pezoldt, and F. Schwierz, "Simulation of 50-nm gate graphene nanoribbon transistors," Electronics, vol. 5(1), no. 3, pp. 1-17, Jan. 2016.
[25] H. Raza and E. C. Kan, "Armchair graphene nanoribbons: electronic structure and electric-field modulation," Physical Review B, vol. 77, no. 24, Article No.: 245434, 5 pp., Jun. 2008.
