طراحي و تحلیل مبدل آنالوگ به ديجيتال کم‌توان با استفاده از ترانزيستور نانولوله کربني
الموضوعات :
سعیده حیدری
1
(دانشگاه کاشان)
داریوش دیدبان
2
(دانشگاه کاشان)
الکلمات المفتاحية: مبدل آنالوگ به ديجيتال, مبدل فلش, مقايسه کننده TIQ, توان مصرفی پایین, انکدر ROM, انکدر Fat tree .,
ملخص المقالة :
امروزه مبدل‌هاي آنالوگ به ديجيتال به عنوان جزء جدايي‌ناپذير از سيستم‌هاي بر روي تراشه به شمار مي‌آيند زيرا فاصله بين دنياي فيزيکي آنالوگ و دنياي منطقي ديجيتال را از بين مي‌برند. اين امر و تمايل روزافزون به استفاده از تجهيزات قابل حمل، سبب شده ملزومات طراحي اين مبدل‌ها مانند سرعت، توان مصرفي و سطح اشغالي بهبود يابند. راهکارها و روش‌هاي مختلفي جهت بهبود عملکرد مبدل‌ها ارائه شده که روز به روز در حال پيشرفت مي‌باشند. با توجه به اهميت روزافزون مبدل‌ها، در اين مقاله يک ADC سريع و کم‌توان با استفاده از CNTFET طراحي شده و عملکرد آن با نمونه مشابه MOSFET با همان طول کانال مورد بررسي قرار گرفته و همچنين عملکرد مبدل طراحي‌شده با دو نوع کدگذار مختلف، ROM و Fat tree مورد مطالعه قرار گرفته است. در ادامه، نتايج شبيه‌سازي که با بهره‌گيري از نرم‌افزار HSPICE در تغذیه 9/0 ولت به دست آمده ارائه گرديده است. نتايج شبيه‌سازي مبدل در فناوری CNTFET بهبود قابل توجهي در پارامترهاي توان و تأخير نسبت به طراحي مشابه در فناوری CMOS نشان مي‌دهد. توان مصرفي و تأخير مبدل مبتنی بر نانولوله کربنی با کدگذار نوع ROM به ترتيب 5/92% و 54% و با کدگذار Fat tree به ترتيب 93% و 72% نسبت به مبدل‌های مبتنی بر ترانزیستورهای CMOS بهبود يافته‌اند.
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