ارزیابی مشخصه فلیپ‌فلاپ استاتیک مبتنی بر ترانزیستور نانو- نوار گرافنی سد شاتکی تحت تغییرات فرایند ساخت
الموضوعات :
عرفان عباسیان
1
(دانشگاه صنعتی نوشیروانی بابل)
مرتضی قلی پور
2
(دانشگاه صنعتی نوشیروانی بابل)
الکلمات المفتاحية: ترانزیستور نانو-نوار گرافنی (GNRFET)سد شاتکیفلیپ فلاپپارامترهای زمانیمونت کارلو,
ملخص المقالة :
ترانزیستورهای نانو- نوار گرافینی (GNRFETs) به عنوان یک گزینه امیدوارکننده برای جایگزینی ترانزیستورهای سیلیکونی متداول در تکنولوژی نسل آینده مطرح می‌باشند. کانال GNRFET در مقیاس چند نانومتر است و از این رو بررسی تأثیر تغییرات فرایند ساخت بر روی عملکرد مدارها بسیار حایز اهمیت خواهد بود. در این مقاله، تأثیر تغییرات فرایند ساخت نظیر ضخامت اکسید، طول کانال و تعداد خطوط دایمر بر روی تأخیر، توان و حاصل‌ضرب انرژی- تأخیر (EDP) فلیپ‌فلاپ مبتنی بر SB-GNRFET ارزیابی شده و مورد تجزیه و تحلیل قرار گرفته است. علاوه بر آن شبیه‌سازی مونت‌کارلو نیز برای تحلیل آماری این تغییرات انجام شده است. با تغییر ضخامت اکسید از مقدار نامی به nm 15/1، تأخیر انتشار و EDP به ترتیب به میزان 57/31 و 62/60 درصد افزایش می‌یابد. همچنین تغییر طول کانال کمترین میزان تأثیر را بر روی مشخصه فلیپ‌فلاپ دارد. با افزایش یک واحد تعداد خطوط دایمر از مقدار نامی، تأخیر انتشار و EDP به ترتیب به میزان 48/315 و 79/204 درصد افزایش می‌یابد. همچنین نتایج حاصل از شبیه‌سازی مونت‌کارلو نشان می‌دهد که مشخصه فلیپ‌فلاپ نسبت به تغییر ضخامت اکسید یک توزیع هیستوگرام با میزان گستردگی 46/2، 57/1 و 39/2 برابر نسبت به تغییر خطوط دایمر دارد.
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