پيشنهاد و بررسي ساختارهاي جديد براي FET ساخته‌شده با نانوتيوب كربني
الموضوعات :رحيم فائز 1 , سیدابراهیم حسینی 2
1 - دانشگاه صنعتي شريف
2 - دانشگاه تربیت معلم سبزوار
الکلمات المفتاحية: نانوتيوب كربنيمدار آنالوگبهبود منحني جريان- ولتاژCNT FET,
ملخص المقالة :
معادله جريان- ولتاژ براي يك ترانزيستور FET ساخته‌شده با نانوتيوب كربني معمولي با پیوند شاتكي سورس و درين مورد بررسي قرار گرفته و محدودیت‌های عملکرد آن در مدارهاي آنالوگ بررسی شده است. این بررسی نشان می‌دهد که ناحیه اشباع در مشخصه خروجی کوچک است. سپس چند ساختار جديد براي افزایش این ناحیه پيشنهاد شده و عملكرد آنها با هم مقايسه شده است.
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