ارزیابی مشخصه فلیپ‌فلاپ استاتیک مبتنی بر ترانزیستور نانو- نوار گرافنی سد شاتکی تحت تغییرات فرایند ساخت
محورهای موضوعی : مهندسی برق و کامپیوترعرفان عباسیان 1 , مرتضی قلی پور 2
1 - دانشگاه صنعتی نوشیروانی بابل
2 - دانشگاه صنعتی نوشیروانی بابل
کلید واژه: ترانزیستور نانو-نوار گرافنی (GNRFET)سد شاتکیفلیپ فلاپپارامترهای زمانیمونت کارلو,
چکیده مقاله :
ترانزیستورهای نانو- نوار گرافینی (GNRFETs) به عنوان یک گزینه امیدوارکننده برای جایگزینی ترانزیستورهای سیلیکونی متداول در تکنولوژی نسل آینده مطرح می‌باشند. کانال GNRFET در مقیاس چند نانومتر است و از این رو بررسی تأثیر تغییرات فرایند ساخت بر روی عملکرد مدارها بسیار حایز اهمیت خواهد بود. در این مقاله، تأثیر تغییرات فرایند ساخت نظیر ضخامت اکسید، طول کانال و تعداد خطوط دایمر بر روی تأخیر، توان و حاصل‌ضرب انرژی- تأخیر (EDP) فلیپ‌فلاپ مبتنی بر SB-GNRFET ارزیابی شده و مورد تجزیه و تحلیل قرار گرفته است. علاوه بر آن شبیه‌سازی مونت‌کارلو نیز برای تحلیل آماری این تغییرات انجام شده است. با تغییر ضخامت اکسید از مقدار نامی به nm 15/1، تأخیر انتشار و EDP به ترتیب به میزان 57/31 و 62/60 درصد افزایش می‌یابد. همچنین تغییر طول کانال کمترین میزان تأثیر را بر روی مشخصه فلیپ‌فلاپ دارد. با افزایش یک واحد تعداد خطوط دایمر از مقدار نامی، تأخیر انتشار و EDP به ترتیب به میزان 48/315 و 79/204 درصد افزایش می‌یابد. همچنین نتایج حاصل از شبیه‌سازی مونت‌کارلو نشان می‌دهد که مشخصه فلیپ‌فلاپ نسبت به تغییر ضخامت اکسید یک توزیع هیستوگرام با میزان گستردگی 46/2، 57/1 و 39/2 برابر نسبت به تغییر خطوط دایمر دارد.
Graphene nanoribbon field-effect transistors (GNRFETs) have emerged as encouraging replacement candidate for traditional silicon-based transistor in next-generation technology. Since GNRFETs’ channel is about a few nanometers, impact of manufacturing process variations on circuits’ performance is very large. In this paper, impact of manufacturing process variations such as oxide thickness, channel length, and number of dimer lines on schottky-barrier-type GNRFETs (SB-GNRFETs)-based static flip-flop characteristics such as delay, power, and energy-delay-product (EDP) is evaluated and analyzed. Furthermore, Monte-Carlo (MC) simulations have been performed for statistical analysis of these variations. With change in the oxide thickness from its nominal value to 1.15 nm, the propagation delay and EDP are increased by 31.57% and 60.62%, respectively. Also, the channel length variation has the least effect on flip-flop characteristic. The propagation delay and EDP are increased by 315.48 % and 204.79%, respectively, when the number of dimer lines increases by one from its nominal value. The results obtained from MC simulations show that the oxide thickness variations lead to spread of 2.46, 1.57 and 2.39 times higher than the number of dimer lines variations in histogram distribution of flip-flop characteristic.
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