پيشنهاد و بررسي ساختارهاي جديد براي FET ساخته‌شده با نانوتيوب كربني
محورهای موضوعی : مهندسی برق و کامپیوتررحيم فائز 1 , سیدابراهیم حسینی 2
1 - دانشگاه صنعتي شريف
2 - دانشگاه تربیت معلم سبزوار
کلید واژه: نانوتيوب كربنيمدار آنالوگبهبود منحني جريان- ولتاژCNT FET,
چکیده مقاله :
معادله جريان- ولتاژ براي يك ترانزيستور FET ساخته‌شده با نانوتيوب كربني معمولي با پیوند شاتكي سورس و درين مورد بررسي قرار گرفته و محدودیت‌های عملکرد آن در مدارهاي آنالوگ بررسی شده است. این بررسی نشان می‌دهد که ناحیه اشباع در مشخصه خروجی کوچک است. سپس چند ساختار جديد براي افزایش این ناحیه پيشنهاد شده و عملكرد آنها با هم مقايسه شده است.
A carbon nanotube field effect transistor (CNTFET) with Schottky contacts for the drain and the source has been investigated. It is shown that the saturation region of the transistor output characteristics is small. This limits the application of the transistor. To improve the saturation range in the output characteristics, new structures are proposed, and the simulation results are compared. The proposed structures have supperior output characteristics.
[1] S. Iijima, "Helical microtubules of graphitic carbon," Nature, vol. 354, no. 6348, pp. 56-58, 7 Nov. 1991.
[2] S. Iijima and T. Ichihashi, "Single-shell carbon nanotubes of 1nm diameter," Nature, vol. 363, no. 6023, pp. 603-605, 1993.
[3] D. S. Bethune, C. H. Kiang, M. S. DeVries, G. Gorman, R. Savoy, and R. Beyers, "Cobalt-catalysed growth of carbon nanotubes with single-atomic-layer walls," Nature, vol. 363, no. 6023, pp. 605-607, 1993.
[4] M. Wang, Z. H. Li, X. F. Shang, X. Q. Wang, and Y. B. Xu, "Field-enhancement factor for carbon nanotube array," J. of Applied Physics, vol. 98, 014315, pp. 1-4. 13 Jul. 2005.
[5] P. Liu, Y. W. Zhanga, and C. Lu, "Oscillatory behavior of gigahertz oscillators based on multiwalled carbon nanotubes," J. of Applied Physics, vol. 98, 014301, pp. 1-4. 1 Jul. 2005.
[6] T. Dürkop, B. M. Kim, and M. S. Fuhrer, "Properties and applications of high-mobility semiconducting nanotubes," J. Phys.: Condens. Matter, vol. 16, pt. 18, pp. R553-R580, 2004.
[7] J. Appenzeller, J. Knoch, M. Radosavljevic´, and Ph. Avouris, "Multimode transport in Schottky-barrier carbon-nanotube field-effect transistors," Physical Review Letters 92, no. 22, pp. 226802-1-226802-4, 2004.
[8] J. Guo, S. Datta, and M. Lundstrom, "A numerical study of scaling issues for schottky-barrier carbon nanotube transistors," IEEE Trans. on Electron Devices, vol. 51, no. 2, pp. 172-177, Feb. 2004.
[9] M. Pourfath, et al., "Separated carrier injection control in carbon nanotube field-effect transistors," J. of Applied Physics, vol. 97, no. 10, pp. 106103-106103-3, 2005.
[10] H. Kajiura, A. Nandyala, and A. Bezryadin, "Quasi-ballistic electron transport in as-produced and annealed multiwall carbon nanotubes," Carbon, vol. 43, no. 6, pp. 1317-1319, 2005.
[11] J. Knoch, S. Mantl, and J. Appenzeller, "Comparison of transport properties in carbon nanotube field-effect transistors with Schottky contacts and doped source/drain contacts," Solid-State Electronics, vol. 49, no. 1, pp.73-76, Jan. 2005.
[12] S. Hasan, J. Guo, M. Vaidyanathan, M. A. Alam, and M. Lundstrom, "Monte carlo simulation of carbon nanotube devices," in Proc. of 10th Int. Workshop on Computational Electronics, pp. 190-191, West Lafayette, 24-27 Oct. 2004.
[13] J. W. Janssen, Spatially Resolved Spectroscopy on Carbon Nanotubes, Delft University Press, 2001.
[14] V. N. Popov, "Carbon nanotubes: properties and application," Materials Science and Engineering, vol. 43, no. 3, pp. 61-102, 15 Jan. 2004.
[15] J. P. Clifford, D. L. John, L. C. Castro, and D. L. Pulfrey, " Electrostatics of electronics of partially gated carbon nanotube FETs," IEEE Trans. on Nanotech., vol. 3, no. 2, pp. 281-286, Jun. 2004.
[16] S. Datta, Electronic Transport in Mesoscopic Systems, Cambridge University Press, 1995.
