بررسی تأثیر سلسلهمراتب حافظه نهان ناهمگن در پردازندههای مراکز داده
الموضوعات :عدنان نصری 1 , محمود فتحی 2 , علی برومندنیا 3
1 - دانشگاه آزاد اسلامی واحد علوم و تحقیقات تهران
2 - دانشگاه علم و صنعت ایران
3 - دانشگاه آزاد اسلامی واحد تهران جنوب
الکلمات المفتاحية: مرکز داده ابریپردازندهسلسلهمراتب حافظه نهانحافظه غیر فرارمحک CloudSuite,
ملخص المقالة :
این مقاله به مسأله تأثیر استفاده از حافظههای غیر فرار در سلسلهمراتب حافظه نهان برای پردازندههای مراکز داده در عصر سیلیکون تاریک پرداخته است. همان طور که مصرف انرژی به یکی از مباحث مهم عملیات و نگهداری مراکز داده ابری تبدیل شده است، فراهمکنندگان سرویسهای ابری به شدت در این زمینه نگران شدهاند. تکنولوژی حافظههای غیر فرار نوظهور جایگزینی مناسب برای حافظههای متداول امروزی میباشند. ما در این مقاله از حافظه غیر فرار STT-RAM در مقایسه با حافظه SRAM به عنوان حافظه نهان سطح آخر استفاده میکنیم. تراکم بالا، دسترسی خواندن سریع، توان مصرفی نشتی نزدیک به صفر و غیر فرار بودن باعث میشود حافظه STT-RAM یک فناوری مهم برای حافظههای درون تراشه باشد. در اکثر تحقیقات قبلی که از حافظههای غیر فرار بهره گرفتهاند، روشهای خاص و مبتنی بر محکهای متعارف بررسی شده و در مورد محکهای ابری نوظهور تحت عنوان بارهای کاری Scale-out تحلیل کاملی انجام ندادهاند. ما در این مقاله با اجرای بارهای کاری Scale-out، تأثیر استفاده از حافظههای غیر فرار در سلسلهمراتب حافظه نهان پردازندههای ابری مراکز داده را بررسی میکنیم. نتایج آزمایش روی محکِ CloudSuite نشان میدهد که استفاده از حافظه STT-RAM در مقایسه با حافظه SRAM در حافظه نهان سطح آخر، میزان انرژی مصرفی را حداکثر 59% کاهش میدهد.
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