استفاده از گیت کمکی برای بهبود مشخصات الکتریکی ترانزیستور اثر میدان بدون پیوند سیلیکون بر روی عایق
الموضوعات :
مهدی وادی‌زاده
1
(دانشگاه آزاد اسلامی واحد ابهر)
الکلمات المفتاحية: ترانزیستور اثر میدان بدون پیوند سیلیکون بر روی عایقتأخیر ذاتی گیتشیب زیر آستانهگیت کمکینسبت جریان حالت روشن به جریان حالت خاموش,
ملخص المقالة :
در ترانزیستورهای اثر میدان بدون پیوند سیلیکون بر روی عایق (SOI-JLFET)، آلایش سورس- کانال- درین از یک سطح و یک نوع است. بنابراین فرایند ساخت آنها نسبت به ترانزیستورهای اثر میدان مد وارونگی سیلیکون بر روی عایق آسان‌تر است. با این حال، شیب زیرآستانه (SS) زیاد و جریان نشتی بالا در SOI-JLFET، عملکرد آن را برای کاربردهای سرعت بالا و توان پایین با مشکل مواجه کرده است. در این مقاله برای اولین بار استفاده از گیت کمکی در ناحیه درین SOI-JLFET برای بهبود SS و کاهش جریان نشتی پیشنهاد شده است. ساختار پیشنهادشده "SOI-JLFET Aug" نامیده می‌شود. انتخاب بهینه برای تابع کار گیت کمکی و طول آن، سبب بهبود هر دو پارامتر شیب زیرآستانه و نسبت جریان روشنی به جریان خاموشی نسبت به ساختار اصلی، Regular SOI-JLFET شده است. نتایج شبیه‌سازی نشان می‌دهد ساختار SOI-JLFET Aug با طول کانال nm 20، mV/dec 71 ~ SS و نسبت 1013 ~ ION/IOFF دارد. SS و نسبت ION/IOFF ساختار SOI-JLFET Aug نسبت به ساختار Regular SOI-JLFET با ابعاد مشابه، به ترتیب 14% و سه دهه بزرگی بهبود یافته‌اند. افزاره SOI-JLFET Aug می‌تواند کاندید مناسبی برای کاربردهای دیجیتال باشد.
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